Low threshold voltage quarter micron MOSFETs for low power applications
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A 0.05 μm-CMOS with ultra shallow source/drain junctions fabricated by 5 keV ion implantation and rapid thermal annealingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Technology leverage for ultra-low power information systemsProceedings of the IEEE, 1995