Technology leverage for ultra-low power information systems
- 1 April 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 83 (4) , 607-618
- https://doi.org/10.1109/5.371969
Abstract
Many applications for future generations of logic and memory chips will be requiring highly sophisticated computing functions at low cost. Small form factors, portability, and low cost will require low power operation. While continued scaling of silicon technology to dimensions below quarter micron devices and interconnections appears technically feasible, higher levels of integration and operation at higher speed have been driving the power consumption of logic chips up instead of down. This paper discusses how scaled submicron silicon technology can provide leverage to reduce power, while gaining in throughput for logic chips, and in capacity for memory functions. Strong reductions in voltage supply have to accompany shrinking dimensions. Materials limits such as tunneling currents through ultra-thin silicon-dioxide gate dielectrics and electromigration in minimum pitch interconnections emerge to be key challenges to realize low power 0.1 /spl mu/m level CMOS circuits. A more than 10/spl times/ gain in productivity as measured by the energy*delay product can be realized by shrinking from 0.5-0.125 /spl mu/m CMOS device technology.Keywords
This publication has 13 references indexed in Scilit:
- Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 μm MOSFET'sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Self-adjusting threshold-voltage scheme (SATS) for low-voltage high-speed operationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Effect of substrate material on crosstalk in mixed analog/digital integrated circuitPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An ultra-low power 0.1 μm CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Power consumption estimation in CMOS VLSI chipsIEEE Journal of Solid-State Circuits, 1994
- Optimization of series resistance in sub-0.2 /spl mu/m SOI MOSFET'sIEEE Electron Device Letters, 1994
- Deep-submicrometer channel design in silicon-on-insulator (SOI) MOSFET'sIEEE Electron Device Letters, 1994
- Gigabit age microelectronics and their manufactureIEEE Transactions on Very Large Scale Integration (VLSI) Systems, 1993
- Trends and limits in monolithic integration by increasing the die areaIEEE Transactions on Semiconductor Manufacturing, 1993
- Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go?Published by Institute of Electrical and Electronics Engineers (IEEE) ,1992