Small Nb/Al-Oxide/Nb Josephson Junction Fabrication Using Lift-Off Processes
- 1 March 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (3A) , L166-168
- https://doi.org/10.1143/jjap.26.l166
Abstract
A lift-off technique is applied to the fabrication of all-refractory Nb/Al-oxide/Nb Josephson tunneling junctions. It is found that the lift-off is very efficient for lowering the influence of stresses in refractory metal electrode on junction characteristics. Small junctions (1 µm) with low leakage current can be fabricated by lift-off technique, whereas an etching process increases leakage currents of small junctions. Current-voltage characteristics of Vm=25 mV at a current density of 10 kA/cm2 and a junction current standard deviation of 3.2% in 1 µm size junctions are obtained.Keywords
This publication has 8 references indexed in Scilit:
- Ultrahigh-speed logic gate family with Nb/Al-AlOx/Nb Josephson junctionsIEEE Transactions on Electron Devices, 1986
- Ellipsometric Study of Nb-Al-AlOx Layered Structure for All-Refractory Josephson JunctionsJapanese Journal of Applied Physics, 1986
- Self-aligned contact process for Nb/Al-AlOx/Nb Josephson junctionsApplied Physics Letters, 1986
- Nb/Al-oxide/Nb Tunnel Junctions for Josephson Integrated CircuitsJapanese Journal of Applied Physics, 1986
- Preparation and characteristics of Nb/Al-oxide-Nb tunnel junctionsJournal of Applied Physics, 1985
- All refractory Josephson tunnel junctions fabricated by reactive ion etchingIEEE Transactions on Magnetics, 1983
- High quality refractory Josephson tunnel junctions utilizing thin aluminum layersApplied Physics Letters, 1983
- Selective niobium anodization process for fabricating Josephson tunnel junctionsApplied Physics Letters, 1981