Photoluminescence of CdIn2S4 single crystals recombination process and localized levels
- 16 June 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 59 (2) , 755-765
- https://doi.org/10.1002/pssa.2210590243
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Fundamental optical constant of the layered semiconductor ZnIn2S4Solid State Communications, 1979
- Photoconductivity and trap distribution in CdIn2S4Physica Status Solidi (a), 1978
- Fundamental optical constants of CdIn2S4Solid State Communications, 1978
- Recombination process of photoexcited carriers in ZnIn2 S4Physica Status Solidi (a), 1977
- Luminescence of ZnIn2Se4 crystalsPhysica Status Solidi (a), 1976
- Trap distribution in ZnIn2S4from photoconductivity analysisJournal of Physics D: Applied Physics, 1976
- Recombination centres and traps in ZnIn2S4Journal of Luminescence, 1975
- Low temperature photoconductivity of ZnIn2Se4 and CdIn2Se4Solid State Communications, 1974
- Trap distribution and photoconductivity in ZnIn2Se4 and ZnIn2Te4Il Nuovo Cimento B (1971-1996), 1974
- Optical properties of a ‘quasi-disordered’ semiconductor: ZnIn2S4Solid State Communications, 1973