A critical review of ohmic and rectifying contacts for silicon carbide
- 1 November 1995
- journal article
- review article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 34 (2-3) , 83-105
- https://doi.org/10.1016/0921-5107(95)01276-1
Abstract
No abstract availableThis publication has 90 references indexed in Scilit:
- Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)Journal of Materials Research, 1995
- Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)Journal of Materials Research, 1995
- Interaction between SiC and Ti powderJournal of Materials Research, 1993
- A study of ohmic contacts on β-SiCInternational Journal of Electronics, 1991
- Auger and electron energy-loss study of the Pd/SiC interface and its dependence on oxidationApplications of Surface Science, 1983
- Summary Abstract: Are they really Schottky barriers after all?Journal of Vacuum Science and Technology, 1982
- AuSiC Schottky barrier diodesSolid-State Electronics, 1974
- Metal-silicon Schottky barriersSolid-State Electronics, 1968
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Electrical Contacts to Silicon CarbideJournal of Applied Physics, 1958