A study of ohmic contacts on β-SiC
- 1 September 1991
- journal article
- physical electronics
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 71 (3) , 439-444
- https://doi.org/10.1080/00207219108925489
Abstract
A study on ohmic contacts on β-SiC is reported. The contacts were formed using titanium, tungsten, and their silicides. The tungsten and titanium contacts exhibited ohmic behaviour following annealing at a low-temperature (300°C) but deteriorated when annealed at 600°C. The minimum contact resistance for titanium and tungsten on SiC was 7.6 ×l0−3 and 6.1 × 10−3ohm-cm2, respectively. The silicides of titanium and tungsten yielded a lower contact resistance than the metallic Ti and W. The minimum contact resistance for TiSi2 and WSi2 is 1.1 × 10−4 and 3.0 × 10−4ohm-cm2, respectively.Keywords
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