Low-Temperature CMOS
- 1 January 1989
- book chapter
- Published by Elsevier
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Electron tunneling and contact resistance of metal-silicon contact barriersPublished by Elsevier ,2002
- Delay times in Si MOSFETS in the 4.2–400 K temperature rangeSolid-State Electronics, 1983
- Temperature dependent threshold behavior of depletion mode MOSFETs: Characterization and simulationSolid-State Electronics, 1979
- Hot-electron emission from silicon into silicon dioxideSolid-State Electronics, 1978
- Influence of the floating substrate potential on the characteristics of ESFI MOS transistorsSolid-State Electronics, 1975
- MOSFET's in the 0°K approximation: Static characteristics of MOSFET's in the 0°K approximationSolid-State Electronics, 1974
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- Thermal conductivity of silicon, germanium, III–V compounds and III–V alloysSolid-State Electronics, 1967
- Low temperature effects in Si FETsSolid-State Electronics, 1965
- The thermal conductivity of germanium and silicon between 2 an d 300° KProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957