Characterization of the perfection of Si1-xGex layers on silicon by x-ray methods
- 1 April 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 129 (3-4) , 537-542
- https://doi.org/10.1016/0022-0248(93)90488-i
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substratesApplied Physics Letters, 1991
- X-ray diffraction characterization of multilayer semiconductor structuresJournal of Vacuum Science & Technology A, 1986
- Triple crystal diffractometer investigations of silicon crystals with different collimator-analyzer arrangementsPhysica Status Solidi (a), 1982
- Separate measurements of dynamical and kinematical X-ray diffractions from silicon crystals with a triple crystal diffractometerPhysica Status Solidi (a), 1979
- Observation of X-ray interferences on thin films of amorphous siliconThin Solid Films, 1973
- Surface Studies of Solids by Total Reflection of X-RaysPhysical Review B, 1954