Photoluminescence of low-energy ion bombarded silicon

15 December 1985

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 47 (12) , 1295-1297
https://doi.org/10.1063/1.96310

Abstract

Using photoluminescence we have examined defects introduced into silicon by low‐energy inert gas ion bombardment (ion beam etching or ion beam milling, with Ne⁺, Ar⁺, Kr⁺, and Xe⁺) in the 200–2000 eV ion energy range. The spectra indicate the presence of noble gas associated centers which appear to be identical to the defect which is responsible for the well‐known I₁ spectrum (or W), except for modifications due to the interaction with the noble gas atoms. The appearance of the modified I₁ spectra at these low bombardment energies suggests a simple structure of the underlying defects.

Keywords

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