Microwave Induced Carrier Multiplication in Indium Antimonide
- 1 February 1962
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (2) , 761-762
- https://doi.org/10.1063/1.1702521
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Properties of-Type InSb in Pulsed High Electric FieldsPhysical Review B, 1960
- Microwave Induced Carrier Multiplication in GermaniumJournal of Applied Physics, 1959
- Electrical Conductivity in p-Type InSb Under Strong Electric FieldJournal of the Physics Society Japan, 1958
- Electrical Conductivity in N-Type InSb Under Strong Electric FieldJournal of the Physics Society Japan, 1958
- High Electric Field Effects in-Indium AntimonidePhysical Review B, 1958
- Avalanche Multiplication and Electron Mobility in Indium Antimonide at High Electric Fields†Journal of Electronics and Control, 1958
- Electron scattering in InSbJournal of Physics and Chemistry of Solids, 1957
- Directional Properties of the Cyclotron Resonance in GermaniumPhysical Review B, 1954