An investigation of photo-quenching properties of LEC GaAs by using optical and electrical techniques
- 1 June 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 50 (1-4) , 395-399
- https://doi.org/10.1016/0169-4332(91)90205-x
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Reverse contrast imaging in GaAsJournal of Crystal Growth, 1990
- Metastability of the midgap levelEL2in GaAs: Relationship with the As antisite defectPhysical Review B, 1985
- Metastable state of EL2 in thealloy systemPhysical Review B, 1984
- Photoinduced quenching of infrared absorption nonuniformities of large diameter GaAs crystalsApplied Physics Letters, 1984
- Optical assessment of the main electron trap in bulk semi-insulating GaAsApplied Physics Letters, 1981