Epitaxial indium arsenide lasers
- 31 January 1967
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (1) , 76-77
- https://doi.org/10.1016/0038-1101(67)90118-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Theory of the four-point probe technique as applied to the measurement of the conductivity of thin layers on conducting substratesBritish Journal of Applied Physics, 1966
- Properties of InAs LasersJournal of Applied Physics, 1966
- High Power CW Operation of GaAs Injection Lasers at 77° KIBM Journal of Research and Development, 1964