Bistable Current Fluctuations in Reverse-Biased p-n Junctions of Germanium
- 1 January 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (1) , 189-192
- https://doi.org/10.1063/1.1708950
Abstract
In base‐to‐emitter diodes of p‐n‐p germanium transistors biased in reverse direction far below breakdown, bistable current fluctuations have been observed. These fluctuations show the typical waveform of a random telegraph signal. Its statistical properties have been analyzed. The mean‐value crossing‐time intervals of current measured by a multichannel pulse‐height analyzer turned out to be independent of reverse voltage but dependent upon temperature. Detailed experimental data are given.This publication has 10 references indexed in Scilit:
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