On the temperature distributions around dislocations in III-V compounds due to Joule heating
- 1 June 1978
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (6) , 3272-3275
- https://doi.org/10.1063/1.325276
Abstract
The nonuniform rate of creation of Joule heat due to variations in the electrical conductivity around dislocations in III‐V compounds gives rise to variations in the temperature around these dislocations. The general equations and boundary conditions for this temperature distribution are derived for any III‐V compound. The specific temperature distributions around 60° and edge dislocations in n‐type GaSb are calculated. It is found that the contribution of the dislocations to the temperature becomes significant within 500 Å from the core, while the gradient of temperature reaches significant values at even greater distances.This publication has 8 references indexed in Scilit:
- The piezoresistance effect and dislocations in III‐V compoundsJournal of Applied Physics, 1978
- Detection of deep-level (0.63 eV) radiative defects during degradation in GaAs0.6P0.4 light-emitting diodesSolid-State Electronics, 1977
- The origin of dislocation climb during laser operationApplied Physics Letters, 1977
- The degradation of semiconductor light-emitting diodes, high-radiance lamps and lasersJournal of Physics D: Applied Physics, 1977
- Native defects and stoichiometry in GaAlAsJournal of Crystal Growth, 1976
- Dislocation climb model in compound semiconductors with zinc blende structureApplied Physics Letters, 1976
- Defect structure of degraded heterojunction GaAlAs−GaAs lasersApplied Physics Letters, 1975
- Interdependence of strain, precipitation, and dislocation formation in epitaxial Se-doped GaAsJournal of Applied Physics, 1974