Detection of deep-level (0.63 eV) radiative defects during degradation in GaAs0.6P0.4 light-emitting diodes
- 31 July 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (7) , 603-606
- https://doi.org/10.1016/0038-1101(77)90098-3
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Non-radiative recombination centers in GaAs0·6P0·4 red light-emitting diodesSolid-State Electronics, 1975
- Properties of vacancy defects in GaAs single crystalsJournal of Applied Physics, 1975
- Photocapacitance investigation of defects in GaAs0.6P0.4Applied Physics Letters, 1974
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Thermally stimulated current measurements and their correlation with efficiency and degradation in GAP LED'SApplied Physics Letters, 1974
- Local correlation of current density, radiant emittance and temperature within GaAsP light-emitting diodesOptical and Quantum Electronics, 1974
- Effect of Donor Concentration on Several Properties of Gallium Arsenide PhosphideJapanese Journal of Applied Physics, 1972
- Stoichiometric effects in the growth of doped epitaxial layers of GaAs1-χPχJournal of Crystal Growth, 1971
- Dislocations and their Relation to Irregularities in Zinc-Diffused GaAsP p-n JunctionsJournal of Applied Physics, 1968
- Dependence of Recombination Radiation on Current in GaAs DiodesJournal of Applied Physics, 1963