Photocapacitance investigation of defects in GaAs0.6P0.4
- 1 August 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (3) , 152-155
- https://doi.org/10.1063/1.1655419
Abstract
This work describes the application of the technique of photocapacitance transients to determine the photoionization cross section, thermal emission rates, and carrier capture coefficients or cross sections of defects in GaAs0.6P0.4. A coupled multiple‐level defect with a large hole capture cross section has been identified in n‐type GaAsP which will result in, and can account for, nanosecond nonradiative minority‐carrier or hole lifetimes in this material. The photoionization crosss section has a sharp threshold at 0.9 eV, placing the main level at 0.9 eV below the conduction band; a level of 0.9 eV has often been observed in GaAs and GaP.Keywords
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