Inadvertent deep centers in n-type GaP from Schottky barrier photocapacitance
- 15 June 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (12) , 674-676
- https://doi.org/10.1063/1.1654549
Abstract
Deep levels arising from inadvertent defect centers have been studied in both liquid‐encapsulated‐Czochralski (LEC) and liquid‐phase‐epitaxial (LPE) n‐type GaP by using Schottky barrier photocapacitance. In LEC material the total concentration of deep levels in the upper half of the band gap is determined to be about 5×1016 cm−3; in LPE material, about 5×1014 cm−3. In the lower half of the band gap, optical emission of majority carriers and thermal emission of minority carriers are observed from two distinct levels at 0.4 and 0.1 eV above the valence band edge. These levels are found to have similar concentrations of about 1×1016 cm−3 in both LPE and LEC material.Keywords
This publication has 3 references indexed in Scilit:
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- Measurement of trapped-minority-carrier thermal emission rates from Au, Ag, and Co traps in siliconApplied Physics Letters, 1972
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