Measurement of trapped-minority-carrier thermal emission rates from Au, Ag, and Co traps in silicon

15 August 1972

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 21 (4) , 157-158
https://doi.org/10.1063/1.1654324

Abstract

A new technique for measuring thermal emission rates of trapped minority carriers is experimentally demonstrated in reverse‐biased n⁺p silicon diodes doped with gold, silver, and cobalt. It makes use of a monochromatic light of a proper photon energy to partially fill the traps with minority carriers (electrons). After the light is turned off, the thermal emission rates of the minority carriers are observed. A unique feature is that the thermal emission rates for both the minority and majority carrier traps can be accurately determined in just one p‐n junction, of either a p⁺n or n⁺p type.

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