Demonstration of a S-MMIC LNA with 16-dB Gain at 340-GHz
- 1 October 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 15508781,p. 1-4
- https://doi.org/10.1109/csics07.2007.19
Abstract
In this paper, an amplifier with a significant amount of gain is demonstrated at sub-millimeter wave frequencies (f > 300-GHz) for the first time. The three stage amplifier uses advanced InP HEMT transistors to realize 16-dB gain at 340-GHz and > 20 dB gain at 280-GHz. The amplifier demonstrates > 100 GHz of bandwidth with gain > 10 dB. This paper demonstrates that full WR-3 waveguide band (220-325 GHz) InP HEMT amplifiers are currently possible and that current device capabilities enable operation well into the sub-millimeter wave regime.Keywords
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