220-GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications
- 12 September 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 40 (10) , 2070-2076
- https://doi.org/10.1109/jssc.2005.854591
Abstract
In this paper, the development of 220-GHz low-noise amplifier (LNA) MMICs for use in high-resolution active and passive millimeter-wave imaging systems is presented. The amplifier circuits have been realized using a well-proven 0.1-/spl mu/m gate length and an advanced 0.05-/spl mu/m gate length InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor technology. Furthermore, coplanar circuit topology in combination with cascode transistors was applied, leading to a compact chip size and an excellent gain performance at high millimeter-wave frequencies. A realized single-stage 0.05-/spl mu/m cascode LNA exhibited a small-signal gain of 10 dB at 222 GHz, while a 0.1-/spl mu/m four-stage amplifier circuit achieved a linear gain of 20 dB at the frequency of operation and more than 10 dB over the bandwidth from 180 to 225 GHz.Keywords
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