Advances in millimeter-wave FET MMIC technology
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- A high gain, low power MMIC LNA for Ka-band using InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 560 mW, 21% power-added efficiency V-band MMIC power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A GaAs HEMT MMIC chip set for automotive radar systems fabricated by optical stepper lithographyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A single-chip 94-GHz frequency source using InP-based HEMT-HBT integration technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Millimeter-wave three-dimensional masterslice MMICSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithographyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 44-GHz high IP3 InP-HBT amplifier with practical current reuse biasingIEEE Transactions on Microwave Theory and Techniques, 1998
- A 95-GHz InP HEMT MMIC amplifier with 427-mW power outputIEEE Microwave and Guided Wave Letters, 1998
- An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHzIEEE Microwave and Guided Wave Letters, 1998