Electrical conductivity of III-V dislocated semiconductors
- 1 July 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7) , 4970-4974
- https://doi.org/10.1063/1.331333
Abstract
We apply the generalized ’’energy loss method’’ to the case of many carrier conduction in III-V dislocated semiconductors by making use of the self-consistent occupation statistics of the whole energy spectrum. As an example we calculate the electrical resistivity of dislocated InSb samples containing ’’60°’’ or screw dislocations. Both the charge line and the piezoelectric scattering potentials are taken into account.This publication has 8 references indexed in Scilit:
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