Analytical approximations for diffused junctions under high-level conditions
- 30 September 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (9) , 769-776
- https://doi.org/10.1016/0038-1101(76)90155-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- On heavy doping effects and the injection efficiency of silicon transistorsSolid-State Electronics, 1974
- Analytical approximations for an abrupt pn junction under high-level conditionsSolid-State Electronics, 1973
- Theory of a forward-biased diffused-junction P-L-N rectifier—Part III: Further analytical approximationsIEEE Transactions on Electron Devices, 1973
- Theory of a forward-biased diffused-junction p-L-n rectifier—II. Analytical approximationsSolid-State Electronics, 1973
- Iterative scheme for computer simulation of semiconductor devicesSolid-State Electronics, 1972
- Space-charge recombination in a forward-biased diffused p-n junctionSolid-State Electronics, 1971
- The influence of heavy doping on the emitter efficiency of a bipolar transistorIEEE Transactions on Electron Devices, 1971
- Accurate numerical steady-state solutions for a diffused one-dimensional junction diodeSolid-State Electronics, 1970
- On the Mathematical Theory of the Linearly-Graded P-N JunctionIBM Journal of Research and Development, 1967
- Potential Distribution and Capacitance of a Graded p-n JunctionBell System Technical Journal, 1960