Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer
- 1 February 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (2) , 194-196
- https://doi.org/10.1109/68.553089
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Selectively oxidized GaAs MESFETs transferred to a Si substrateIEEE Electron Device Letters, 1997
- Monolithically integrated optical differential amplifiers for applications in smart pixel arraysIEEE Journal of Quantum Electronics, 1996
- Fabrication and performance of selectively oxidized vertical-cavity lasersIEEE Photonics Technology Letters, 1995
- Very-low-threshold index-confined planar microcavity lasersIEEE Photonics Technology Letters, 1995
- Cavity characteristics of selectively oxidized vertical-cavity lasersApplied Physics Letters, 1995
- Native-oxide defined ring contact for low threshold vertical-cavity lasersApplied Physics Letters, 1994
- Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistorApplied Physics Letters, 1993
- Hydrolyzation oxidation of AlxGa1−xAs-AlAs-GaAs quantum well heterostructures and superlatticesApplied Physics Letters, 1990