A high-gain (Ga,Al)As/GaAs heterostructure bipolar transistor with an equilibrium-depleted spike-doped base
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (4) , 168-170
- https://doi.org/10.1109/55.31706
Abstract
The fabrication is reported of a high-gain (Ga,Al)As/GaAs heterostructure bipolar transistor (HBT) with a p-spike-doped base that is depleted at equilibrium. The device structure, based on that proposed for a bipolar inversion-channel field-effect transistor (BICFET), was grown by molecular-beam epitaxy (MBE). Fabricated transistors, containing an AlAs/n-GaAs superlattice emitter layer, exhibited DC current gains of up to 500. Maximum current gains of tested devices occurred at collector current densities in the mid-10/sup 3/ A cm/sup -2/ range. It is postulated that the induced base in these transistors is formed predominantly by the forward-bias action on the base-emitter junction.Keywords
This publication has 8 references indexed in Scilit:
- Numerical simulation of an AlGaAs/GaAs bipolar inversion channel field effect transistorSolid-State Electronics, 1988
- A p-channel BICFET in the InGaAs/InAlAs material systemIEEE Electron Device Letters, 1988
- Demonstration of a p-channel GaAs/AlGaAs BICFETIEEE Electron Device Letters, 1988
- A planar-doped 2D-hole gas base AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxyIEEE Electron Device Letters, 1988
- Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy compositionJournal of Applied Physics, 1986
- The bipolar inversion channel field-effect transistor (BICFET)—A new field-effect solid-state device: Theory and structuresIEEE Transactions on Electron Devices, 1985
- Small-signal model and high-frequency performance of the BICFETIEEE Transactions on Electron Devices, 1985
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985