Electron Tunneling through Chemical Oxide of Silicon
- 1 May 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (5B) , L609-611
- https://doi.org/10.1143/jjap.34.l609
Abstract
Carrier transport between gold and n+-Si through chemical oxides of Si was measured for the first time using an atomic force microscope with a conducting probe. It was found from the theoretical calculation of carrier transport in 0.7-nm-thick chemical oxide formed in a mixed solution of H2SO4and H2O2that the carrier transport can be explained as a direct tunneling of electrons through chemical oxide.Keywords
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