Pulsed laser annealing of P-implanted diamond
- 11 October 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (15) , 2062-2064
- https://doi.org/10.1063/1.110592
Abstract
Diamond deeply implanted with 4 MeV P ions to a dose of 1×1015/cm2 is annealed by a focused pulsed laser that is selectively absorbed by the implanted damaged layer. Laser treatment with multiple pulses at ever increasing power leads to excellent regrowth as measured by channeling Rutherford backscattering spectroscopy, surface profilometry, and by optical transmission. The importance of the deep implantation and the potential of this method for doping diamond is demonstrated.Keywords
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