Piezowiderstand von n‐Silizium in Abhängigkeit von der elektrischen Feldstärke
- 1 January 1965
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 11 (1) , 255-265
- https://doi.org/10.1002/pssb.19650110123
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
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- Zur Frage der Beweglichkeit der heißen Elektronen in n-Silizium bei 77 °KPhysica Status Solidi (b), 1964
- Piezoresistance and Piezo-Hall-Effect in-Type SiliconPhysical Review B, 1963
- Piezowiderstandsmessungen an n‐SiliziumPhysica Status Solidi (b), 1963
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- The Effects of Elastic Deformation on the Electrical Conductivity of SemiconductorsPublished by Elsevier ,1960
- Inter-Electron Collisions and the `Temperature' of Hot ElectronsProceedings of the Physical Society, 1959
- Experimental Determination of Electron Temperature in High Electric Fields applied to GermaniumProceedings of the Physical Society, 1958
- Temperature Dependence of the Piezoresistance of High-Purity Silicon and GermaniumPhysical Review B, 1957
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954