Piezowiderstandsmessungen an n‐Silizium
- 1 January 1963
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 3 (7) , K255-K258
- https://doi.org/10.1002/pssb.19630030714
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Piezowiderstandseffekt in GalliumarsenidZeitschrift für Naturforschung A, 1962
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Scattering Anisotropies in-Type SiliconPhysical Review B, 1960
- The Effects of Elastic Deformation on the Electrical Conductivity of SemiconductorsPublished by Elsevier ,1960
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954
- Measurement of Elastic Constants at Low Temperatures by Means of Ultrasonic Waves–Data for Silicon and Germanium Single Crystals, and for Fused SilicaJournal of Applied Physics, 1953