Deposition of tungsten on silicon dioxide by GeH4 reduction of WF6
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The growth of ultra-thin amorphous WGex films on Si by the GeH4 reduction of WF6Applied Surface Science, 1991
- A thermodynamic and kinetic study of chemical vapor deposition of tungsten from WF6 and GeH4Journal of Applied Physics, 1991
- Selective chemical vapor deposition of tungsten using WF6 and GeH4Applied Physics Letters, 1990
- The adhesion and surface energy of elastic solidsJournal of Physics D: Applied Physics, 1971