Novel techniques for characterizing detector materials using pulsed infrared synchrotron radiation

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Abstract
The VUV ring at the National Synchrotron Light Source (NSLS, Brookhaven national Laboratory) is a source of nanosecond-duration, high-brightness, broadband IR pulses. The authors are developing several measurement techniques for characterizing Hg1-xCdxTe and other IR detector materials using this source. For example, the broadband IR pulses can be used to study transient photoconductive decay at various photon energies near the bandgap. A particularly novel technique they have developed is far-infrared photoinduced nanosecond spectroscopy (FIR-PINS). In this all-optical (contactless) measurement, a short laser pulse generates photocarriers which are subsequently sensed by a far-infrared pulse from the synchrotron. Spectroscopic analysis of the far-infrared yields the free carrier plasma frequency, providing information on the photocarrier density. By varying the delay time of the far-infrared pulse (relative to the laser pulse), the photocarrier relaxation is determined with nanosecond resolution. In addition to being contactless, the technique offers other potential advantages over electrical measurements. Results for MBE-grown Hg1-xCdxTe are presented.