Minority carrier lifetime of HgCdTe from photoconductivity decay method
- 2 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (10) , 1221-1223
- https://doi.org/10.1063/1.105509
Abstract
The results of an analytical study of the photoconductivity decay (PCD) method for measuring carrier lifetimes of n-type HgCdTe show that the measurements give much higher values than the minority carrier lifetimes when trapping is significant. In contrast, for p-type HgCdTe, the PCD method gives results equal to or less than the minority carrier lifetime under the same trapping conditions. The difference in results between n-type and p-type HgCdTe is due to the different recombination properties of excess electrons when they are majority carriers or minority carriers, respectively.Keywords
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