Shockley–Read recombination and trapping in p-type HgCdTe
- 1 October 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (7) , 3405-3412
- https://doi.org/10.1063/1.346346
Abstract
The concepts and definitions of the steady-state minority-carrier lifetime, the steady-state majority-carrier lifetime, and the transient excess-carrier lifetime in semiconductors are reviewed. The effects that Shockley–Read centers have on these lifetimes are discussed, with emphasis given to the case of p-type Hg0.775Cd0.225Te containing traps. Measurements of the excess-carrier lifetime in Hg0.775Cd0.225Te (Na∼1×1016/cm3) using various experimental techniques are then summarized in view of the above definitions.This publication has 17 references indexed in Scilit:
- Transient and steady-state excess carrier lifetimes in p-type HgCdTeApplied Physics Letters, 1989
- The excess carrier lifetime in p-type HgCdTe measured by photoconductive decayJournal of Applied Physics, 1989
- Minority carrier lifetime in doped and undoped p-type CdxHg1-xTeSemiconductor Science and Technology, 1987
- Lifetime and carrier-concentration profile of B+-implanted p-type HgCdTeJournal of Applied Physics, 1986
- Light-modulated Hall effect for extending characterization of semiconductor materialsJournal of Applied Physics, 1986
- Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effectsJournal of Applied Physics, 1985
- Effects of deep‐level defects in Hg1−xCdxTe provided by DLTSJournal of Vacuum Science and Technology, 1982
- Experimental determination of minority-carrier lifetime and recombination mechanisms in p-type Hg1−xCdxTeJournal of Applied Physics, 1981
- Carrier Lifetime in Semiconductors for Transient ConditionsPhysical Review B, 1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952