Transient and steady-state excess carrier lifetimes in p-type HgCdTe
- 30 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (18) , 1882-1884
- https://doi.org/10.1063/1.102160
Abstract
The transient and steady‐state excess carrier lifetimes in p‐type Hg0.775Cd0.225Te have been measured as a function of temperature. It is demonstrated that the transient lifetime can be greater than the steady‐state lifetime by as much as a factor of 16 at 77 K. This difference is attributed to minority‐carrier trapping, and explains, in part, the large range of lifetimes which have been reported for this material.Keywords
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