Schottky barrier photodiodes in p Hg1−xCdxTe

This publication has 12 references indexed in Scilit:

• Improved performance of implanted n⁺-p Hg_1-xCd_xTe photodiodes using insulated field plates
  IEEE Electron Device Letters, 1980
• The breakdown voltage of planar Schottky diodes
  International Journal of Electronics, 1978
• Effects of ultrathin oxides in conducting MIS structures on GaAs
  Journal of Vacuum Science and Technology, 1978
• Doping properties of selected impurities in Hg1−x Cdx Te
  Journal of Electronic Materials, 1977
• Application of scanning electron microscopy to determination of surface recombination velocity: GaAs
  Applied Physics Letters, 1975
• Electron-Beam Excited Minority-Carrier Diffusion Profiles in Semiconductors
  Journal of Applied Physics, 1972
• The Richardson constant for thermionic emission in Schottky barrier diodes
  Solid-State Electronics, 1965
• Analysis and characterization of P-N junction diode switching
  IEEE Transactions on Electron Devices, 1964
• Switching Time in Junction Diodes and Junction Transistors
  Proceedings of the IRE, 1954
• Statistics of the Recombinations of Holes and Electrons
  Physical Review B, 1952