Minority carrier recombination in p-type CdxHg1-xTe
- 1 August 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (8) , 836-841
- https://doi.org/10.1088/0268-1242/5/8/006
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Minority carrier lifetime in doped and undoped p-type CdxHg1-xTeSemiconductor Science and Technology, 1987
- Picosecond correlation measurements of indium phosphide photoconductorsApplied Physics Letters, 1983
- Deep level studies of Hg1−xCdxTe. II: Correlation with photodiode performanceJournal of Applied Physics, 1981
- Deep level studies of Hg1−xCdx Te. I: Narrow-band-gap space-charge spectroscopyJournal of Applied Physics, 1981
- Picosecond transient photocurrents in amorphous siliconPhysical Review B, 1981
- Calculation of the Auger lifetime in p-type Hg1-xCdxTeJournal of Applied Physics, 1981
- Recombination processes in intrinsic semiconductors using impact ionization capture cross sections in indium antimonide and mercury cadmium tellurideInfrared Physics, 1980
- Recombination in cadmium mercury telluride photodetectorsSolid-State Electronics, 1978
- The Auger-effect in Hg1−xCdxTeSolid-State Electronics, 1978
- Quantum efficiency in InSbJournal of Physics and Chemistry of Solids, 1962