Deep level studies of Hg1−xCdxTe. II: Correlation with photodiode performance
- 1 August 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (8) , 5132-5138
- https://doi.org/10.1063/1.329412
Abstract
Trapping parameters measured by deep level transient spectroscopy (DLTS) for several samples of Hg1−xCdxTe doped p type by mercury vacancies have been correlated with photodiode characteristics. The samples are Hg1−xCdxTe with x values of 0.215, 0.305, and 0.320. The DLTS measured parameters are trap energy, concentration, and electron and hole capture cross sections. These parameters are used to calculate minority carrier lifetime and generation-recombination noise current. DLTS has identified Shockley-Read recombination centers which determines the carrier lifetime of p-type Hg1−xCdxTe photodiodes and the resistance-area product detectivity figure of merit.This publication has 11 references indexed in Scilit:
- Experimental determination of minority-carrier lifetime and recombination mechanisms in p-type Hg1−xCdxTeJournal of Applied Physics, 1981
- Deep level studies of Hg1−xCdx Te. I: Narrow-band-gap space-charge spectroscopyJournal of Applied Physics, 1981
- Effect of trap tunneling on the performance of long-wavelength Hg1-xCdxTe photodiodesIEEE Transactions on Electron Devices, 1980
- Temperature dependences of the nonradiative multiphonon carrier capture and ejection properties of deep traps in semiconductors. I. Theoretical resultsPhysica Status Solidi (b), 1978
- Recombination statistics for auger effects with applications to p-n junctionsSolid-State Electronics, 1963
- Quantum efficiency in InSbJournal of Physics and Chemistry of Solids, 1962
- Electronic Processes and Excess Currents in Gold-Doped Narrow Silicon JunctionsPhysical Review B, 1961
- Giant trapsJournal of Physics and Chemistry of Solids, 1959
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Switching Time in Junction Diodes and Junction TransistorsProceedings of the IRE, 1954