Minority-carrier lifetime in p-type (111)B HgCdTe grown by molecular-beam epitaxy
- 15 November 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (10) , 5195-5199
- https://doi.org/10.1063/1.347061
Abstract
Measurements of electron lifetime have been carried out on unintentionally doped layers of (111)B Hg1−xCdxTe (0.216<xp‐type as‐grown by molecular‐beam epitaxy. The temperature dependence of the bulk lifetime is explained in terms of the Shockley–Read recombination mechanism for the extrinsic region. The samples have shown a deep level close to midgap. The surface recombination seen in two of the samples is accounted for. Some samples show clearly Auger‐limited recombination at high temperatures. From the values of τn0 and τp0 of two samples the trap level appears to have a donorlike character.This publication has 17 references indexed in Scilit:
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