Determination of the specific surface area of porous silicon from its etch rate in HF solutions
- 1 April 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 306 (1-2) , L550-L554
- https://doi.org/10.1016/0039-6028(94)91176-2
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Influence of wettability on anodic bias induced electroluminescence in porous siliconApplied Physics Letters, 1993
- Porous silicon photoluminescence versus HF etching: No correlation with surface hydrogen speciesApplied Physics Letters, 1993
- Visible photoluminescence from porous silicon: A quantum confinement effect mainly due to holes?Applied Physics Letters, 1992
- First-principles calculations of the electronic properties of silicon quantum wiresPhysical Review Letters, 1992
- Characterization of microporous Si by flow calorimetry: Comparison with a hydrophobic SiO2 molecular sieveJournal of Applied Physics, 1992
- Photoluminescence studies on porous siliconApplied Physics Letters, 1992
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- Observation of Etching of n-Type Silicon in Aqueous HF SolutionsJournal of the Electrochemical Society, 1967