Oxygenation Process of Ti–O Films Formed by Reactive Ion Plating

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Abstract
Ti–O films were deposited under various conditions by RF reactive ion plating. The structures of the TiO2 films were controlled using various parameters such as substrate temperature, RF power, deposition rate, and pressure of reactive gas. By changing the deposition rate at the substrate temperature of 250°C, the crystal structure could be changed from an anatase phase to a rutile phase. In other words, a rutile structure could be deposited even at a low substrate temperature. The emission spectra of ions and excited species in the plasma were measured by optical emission spectroscopy (OES). Relative spectral intensities of these species were studied. The resulting relative relationship of emission intensities of Ti* and O2 + was found to influence reactions in Ti–O film formation.