Gain-bandwidth product of AlGaSb avalanche photodiodes analyzed by using equivalent multiplication region method
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (5) , 230-231
- https://doi.org/10.1109/55.31730
Abstract
An analysis presented for an AlGaSb diode in which it was approximated by a p-i-n diode with an equivalent multiplication region having a length of one-eighth of the whole depletion region and was combined with R.B. Emmon's p-i-n avalanche photodiode analysis (1967). A relationship between the gain-bandwidth product and the carrier concentration is derived, and it is shown to agree well with the experimental data.Keywords
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