Demonstration of the heterostructure field-effect transistor as an optical modulator

26 August 1991

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 59 (9) , 1031-1033
https://doi.org/10.1063/1.106335

Abstract

A new semiconductor waveguide absorption modulator is demonstrated utilizing the heterostructure field‐effect transistor structure. The modulator of 300 μm length and 10 μm width achieves an extinction ratio of 8 for a gate voltage change of 2.5 V and an absorption change greater than 2300 cm⁻¹. The transistor transconductance is 92 ms/mm for a 1 μm device and an identical structure has been reported as an edge‐emitting laser providing an ideal combination for optoeletronic integration.

Keywords

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