Defect instability in ultra-thin oxides on silicon
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 25-28
- https://doi.org/10.1016/s0167-9317(97)00009-9
Abstract
No abstract availableKeywords
Funding Information
- National Science Foundation (ECS-9530984, ECS-9624798)
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- CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCEApplied Physics Letters, 1967