Missing dimers and strain relief in Ge films on Si(100)
- 15 April 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (15) , 8833-8836
- https://doi.org/10.1103/physrevb.45.8833
Abstract
The 2×8 reconstruction of Ge films of Si(100) is shown to arise from ordered arrays of rebonded missing dimers (RMD’s). Such a reconstruction was suggested by Pandey for Si(100). However, because of their large tensile stress, RMD’s are much more energetically favorable in epitaxially compressed Ge films. For Si(100), RMD’s have a very small energy, and their presence may account for the puzzling discrepancy between theory and experiment for the stress anisotropy.This publication has 10 references indexed in Scilit:
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