Interdiffusion in InGaAs/GaAs: The effect of growth conditions
- 1 July 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (1) , 232-236
- https://doi.org/10.1063/1.368079
Abstract
The effect of growth temperature and group-V to group-III flux ratio on the intermixing process in molecular beam epitaxialgrown In x Ga 1−x As/GaAs multiquantum wells were studied by means of photoluminescence coupled with repetitive thermal anneal experiments. We have shown that, for a wide range of growth conditions (growth temperatures from 565 to 636 °C and flux ratios from 5:1 to 25:1) the interdiffusion is controlled solely by a constant background concentration of vacancies which are probably introduced into the substrate during its manufacture. We have shown that, only growth at very low temperatures (470 ° C ) will result in appreciable excess vacancies.This publication has 13 references indexed in Scilit:
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