Detection of electromigration in VLSI metalizations layers by low-frequency noise measurements
- 7 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 681-684
- https://doi.org/10.1109/iedm.1989.74371
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A 1/f noise technique to extract the oxide trap density near the conduction band edge of siliconIEEE Transactions on Electron Devices, 1989
- Determination of Si-SiO/sub 2/ interface trap density by 1/f noise measurementsIEEE Transactions on Electron Devices, 1988
- Study of 1/f noise in N-MOSFET's: Linear regionIEEE Transactions on Electron Devices, 1985
- Noise and Grain-Boundary Diffusion in Aluminum and Aluminum AlloysPhysical Review Letters, 1985
- Electromigration detection by means of low-frequency noise measurements in thin-film interconnectionsIEEE Electron Device Letters, 1985
- Low-frequency fluctuations in solids:noiseReviews of Modern Physics, 1981
- Temperature Dependence ofNoise in Silver and CopperPhysical Review Letters, 1977
- Screening of metal film defects by current noise measurementsApplied Physics Letters, 1973