The vibrational modes of silicon acceptors in p-type GaAs grown by molecular beam epitaxy on a (111)A plane
- 1 April 1993
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (7) , 3574-3576
- https://doi.org/10.1063/1.352913
Abstract
Silicon impurities in p‐type GaAs grown by molecular beam epitaxy occupy As lattice sites and give rise to an infrared active localized vibrational mode (LVM) which appears as a Fano profile near 395 cm−1 in samples with p=1019 cm−3 or 1020 cm−3. 2 MeV electron irradiation reduces p, leading to the emergence of the usual LVM absorption line of SiAs at 399 cm−1. The treatment also leads to site switching to produce SiGa donors giving an LVM at 384 cm−1.This publication has 16 references indexed in Scilit:
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