Hot-carrier effects on gate-induced-drain-leakage (GIDL) current in thin-film SOI/NMOSFET's
- 1 May 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (5) , 169-171
- https://doi.org/10.1109/55.291597
Abstract
The gate-induced-drain-leakage (GIDL) currents in thin-film SOI/NMOSFET's have been studied before and after front-channel hot-carrier stress. Both the normal-mode stress (with the front gate biased beyond the threshold voltage and the drain biased at a high positive voltage, while the source is grounded with the back gate) and the reverse-mode stress (with the source and drain interchanged) have been investigated. The following significant changes have been observed: i) an increase of the off-state drain GIDL current after the normal-mode stress, especially in the low gate field region, and ii) a decrease of the off-state GIDL current after the reverse-mode stress, especially in the high gate field region. These changes can be attributed to the hot-carrier induced interface traps and their effects on the parasitic bipolar transistor gain in the thin-film SOI/NMOSFET.Keywords
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