Carrier relaxation in an InP/InGaAs nonlinear Bragg reflector
- 20 July 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (3) , 297-299
- https://doi.org/10.1063/1.121814
Abstract
Carrier dynamics in absorption saturation in an InP/InGaAs nonlinear Bragg reflector is studied by transient reflectance measurements. An ultrafast process of the relaxation time shorter than 100 fs is observed and identified as carrier-carrier scattering. Such an ultrafast process is not observed in the transient reflectance of bulk InGaAs measured with the same photoexcitation level. The difference between these transient reflectance characteristics indicates an enhancement of carrier-carrier scattering in the nonlinear Bragg reflector.Keywords
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