Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology
- 1 December 1994
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (6) , 2525-2529
- https://doi.org/10.1109/23.340611
Abstract
We present experimental results from a fast charge amplifier and a wideband analog buffer processed in the DMILL BiCMOS-JFET radhard SOI technology and irradiated up to 4.5/spl times/10/sup 14/ protons/cm/sup 2/. In parallel, we have irradiated elementary transistors. These components were biased and electrical measurements were done 30 min after beam stop. By evaluating variations of main SPICE parameters, i.e., threshold voltage shift for CMOS and current gain variation for bipolar transistors, we have simulated the wideband analog buffer at different doses. These SPICE simulations are in good agreement with measured circuit degradations. The behavior of the charge amplifier is consistent with extraction of transconductance and pinch-off voltage shift of the PJFET.Keywords
This publication has 2 references indexed in Scilit:
- Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronicsIEEE Transactions on Nuclear Science, 1993
- The radiation field in and around Hadron collider detectorsIEEE Transactions on Nuclear Science, 1992